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Temperature and intensity dependence of the performance of an electron-irradiated (AlGa)As/GaAs solar cellThe performance of a Hughes, liquid-phase epitaxial 2 centimeter-by-2 centimeter, (AlGa)As/GaAs solar cell was measured before and after irradiations with 1 MeV electrons to fluences of 1 x 10 to the 16th power electrons/sq cm. The temperature dependence of performance was measured over the temperature range 135 to 415 K at each fluence level. In addition, temperature dependences were measured at five intensity levels from 137 to 2.57 mW/sq cm before irradiation and after a fluence of 1 x 10 to the 16th power electrons/sq cm. For the intermediate fluences, performance was measured as a function of intensity at 298 K only.
Document ID
19790024494
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1979
Publication Information
Publication: Solar Cell High Frequency and Radiation Damage, 1979
Subject Category
Energy Production And Conversion
Accession Number
79N32665
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19790024469Collected WorksSolar Cell High Efficiency and Radiation Damage, 1979
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