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Solid-state X-band Combiner StudyThe feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.
Document ID
19800003081
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Pitzalis, O., Jr.
(Hughes Research Labs. Malibu, CA, United States)
Russell, K. J.
(Hughes Research Labs. Malibu, CA, United States)
Date Acquired
September 4, 2013
Publication Date
August 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-162432
Accession Number
80N11328
Funding Number(s)
CONTRACT_GRANT: JPL-955223
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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