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Radiation damage in lithium-counterdoped n/p silicon solar cellsLithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.
Document ID
19800007297
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Hermann, A. M. (Tulane Univ. Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Brandhorst, H. W., Jr. (NASA Lewis Research Center Cleveland, OH, United States)
Weinberg, I. (NASA Lewis Research Center)
Date Acquired
September 4, 2013
Publication Date
January 1, 1980
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-TM-81391
E-301
Meeting Information
Meeting: Photovoltaic Specialists Conf.
Location: San Diego, CA
Country: United States
Start Date: January 7, 1980
End Date: January 10, 1980
Sponsors: IEEE
Accession Number
80N15557
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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