NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Study of LPE methods for growth of InGaAsP/InP CW lasersTwo methods for liquid phase growth of InGaAsP/InP lasers were studied. Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP and 20 C nominal supercooling. Substrates cut on the (100) plane were used, and morphology in both cases was excellent and comparable to that obtainable in AlGaAs materials. A high degree of reproducibility was obtained in the materials grown by the two phased method, which is therefore presently preferred for the preparation of laser material. A refractive index step of 0.28 and an index n = 3.46 were obtained for In.81Ga.19As,5P5 lasing at 1.3 microns. Oxide-stripe lasers with typical room temperature cw threshold currents of 180 mA were obtained and some of them showed single mode behavior without lateral cavity modifications. COntinuous operation of 800 h at room temperature was obtained without noticeable degradation.
Document ID
19800013249
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Ladany, I. (RCA Labs. Princeton, NJ, United States)
Hawrylo, F. Z. (RCA Labs. Princeton, NJ, United States)
Smith, R. T. (RCA Labs. Princeton, NJ, United States)
Levin, E. R. (RCA Labs. Princeton, NJ, United States)
Date Acquired
September 4, 2013
Publication Date
April 1, 1980
Publication Information
Publisher: NASA
Subject Category
Lasers And Masers
Report/Patent Number
NASA-CR-3268
PRRL-79-CR-40
Accession Number
80N21735
Funding Number(s)
CONTRACT_GRANT: NAS1-15440
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available