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Semiconductor technology program. Progress briefsThe current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.
Document ID
19810016784
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Bullis, W. M.
(National Bureau of Standards Washington, DC, United States)
Date Acquired
September 4, 2013
Publication Date
December 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NBSIR-79-1591-5
PB81-154122
NASA-CR-164401
Accession Number
81N25320
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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