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Development of methods of producing large areas of silicon sheet by the slicing of silicon ingots using Inside Diameter (I.D.) sawsModifications to a 16 inch STC automated saw included: a programmable feed system; a crystal rotating system; and a STC dynatrack blade boring and control system. By controlling the plating operation and by grinding the cutting edge, 16 inch I.D. blades were produced with a cutting edge thickness of .22 mm. Crystal rotation mechanism was used to slice 100 mm diameter crystals with a 16 inch blade down to a thickness of .20 mm. Cutting rates with crystal rotation were generally slower than with standard plunge I.D. slicing techniques. Using programmed feeds and programmed rotation, maximum cutting rates were from 0.3 to 1.0 inches per minute.
Document ID
19810021972
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Aharonyan, P. (Santa Barbara Research Center Goleta, CA, United States)
Date Acquired
September 4, 2013
Publication Date
April 1, 1980
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-164690
DOE/JPL-955131-81/2
ORD-78/DRL-SE-5
JPL-9950567
Accession Number
81N30514
Funding Number(s)
CONTRACT_GRANT: JPL-955131
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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