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Effect of electronic structure of the diamond surface on the strength of the diamond-metal interfaceA diamond surface undergoes a transformation in its electronic structure by a vacuum anneal at approximately 900 C. The polished surface has no electronic states in the band gap, whereas the annealed surface has both occupied and unoccupied states in the and gap and exhibits some electrical conductivity. The effect of this transformation on the strength of the diamond metal interface was investigated by measuring the static friction force of an atomically clean meta sphere on a diamond flat in ultrahigh vacuum. It was found that low friction (weak bonding) is associated with the diamond surface devoid of gap states whereas high friction (strong bonding) is associated with the diamond surface with gap states. Exposure of the annealed surface to excited hydrogen also leads to weak bonding. The interfacial bond is discussed in terms of interaction of the metal conduction band electrons with the band gap states on the diamond surface. Effects of surface electrical conductivity on the interfacial bond are also be considered.
Document ID
19810023726
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Pepper, S. V. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1981
Subject Category
Nonmetallic Materials
Report/Patent Number
E-998
NASA-TM-82714
Meeting Information
Meeting: Natl. Symp. of the Am. Vacuum Soc.
Location: Anaheim, CA
Country: United States
Start Date: November 2, 1981
End Date: November 6, 1981
Accession Number
81N32269
Funding Number(s)
PROJECT: RTOP 506-53-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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