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Whatever happened to silicon carbideThe progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.
Document ID
19820007453
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Campbell, R. B. (Westinghouse Electric Corp. Pittsburgh, PA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Publication Information
Publication: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.
Subject Category
Electronics And Electrical Engineering
Accession Number
82N15326
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19820007438Collected WorksProceedings of the Conference on High-temperature Electronics
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