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Tribological properties of sintered polycrystalline and single crystal silicon carbideTribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.
Document ID
19820016467
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Miyoshi, K.
(NASA Lewis Research Center Cleveland, OH, United States)
Buckley, D. H.
(NASA Lewis Research Center Cleveland, OH, United States)
Srinivasan, M.
(Carborundum)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
Nonmetallic Materials
Report/Patent Number
NASA-TM-82829
NAS 1.15:82829
E-1194
Accession Number
82N24343
Funding Number(s)
PROJECT: RTOP 506-53-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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