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Effects of processing and dopant on radiation damage removal in silicon solar cellsGallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.
Document ID
19820023567
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Brandhorst, H. W., Jr. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Mehta, S. (Cleveland State Univ. Ohio, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
Spacecraft Propulsion And Power
Report/Patent Number
E-1270
NASA-TM-82892
NAS 1.15:82892
Accession Number
82N31443
Funding Number(s)
PROJECT: RTOP 506-55-42
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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