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III-V semiconductor solid solution single crystal growthThe feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.
Document ID
19820024985
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Gertner, E. R. (Rockwell International Science Center Thousand Oaks, CA, United States)
Date Acquired
September 4, 2013
Publication Date
February 1, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.26:169301
JPL-9950-722
SC5210.51FR
NASA-CR-169301
Accession Number
82N32861
Funding Number(s)
CONTRACT_GRANT: JPL-955352
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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