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Advances in large-diameter liquid encapsulated Czochralski GaAsThe purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.
Document ID
19830007548
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Chen, R. T. (Rockwell International Corp. Thousand Oaks, CA, United States)
Holmes, D. E. (Rockwell International Corp. Thousand Oaks, CA, United States)
Kirkpatrick, C. G. (Rockwell International Corp. Thousand Oaks, CA, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1982
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1982: High Efficiency, Radiation Damage, and Blanket Technol.
Subject Category
Energy Production And Conversion
Accession Number
83N15819
Funding Number(s)
CONTRACT_GRANT: NAS3-22224
CONTRACT_GRANT: NAS3-22235
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19830007535Collected WorksSpace Photovoltaic Research and Technology 1982: High Efficiency, Radiation Damage, and Blanket Technology
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