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Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approachAn experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.
Document ID
19840012848
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E. (NASA Lewis Research Center Cleveland, OH, United States)
Godlewski, M. P. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 4, 2013
Publication Date
May 4, 1984
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-TM-83612
NAS 1.15:83612
Meeting Information
Meeting: Photovoltaic Specialists Conf.
Location: Kissimmee, FL
Country: United States
Start Date: May 1, 1984
End Date: May 4, 1984
Sponsors: IEEE
Accession Number
84N20916
Funding Number(s)
PROJECT: RTOP 506-55-42
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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