NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Bondability of Al-Si thin film in thermosonic gold wire bondingThe bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.
Document ID
19850010761
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nakagawa, K. (NASA Headquarters Washington, DC United States)
Miyata, K. (NASA Headquarters Washington, DC United States)
Banjo, T. (NASA Headquarters Washington, DC United States)
Shimada, W. (NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1985
Subject Category
Metallic Materials
Report/Patent Number
NAS 1.15:77795
NASA-TM-77795
Accession Number
85N19071
Funding Number(s)
CONTRACT_GRANT: NASW-4004
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available