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Heavy doping effects in high efficiency silicon solar cellsA model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.
Document ID
19850017629
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Lindholm, F. A. (Florida Univ. Gainesville, FL, United States)
Neugroschel, A. (Florida Univ. Gainesville, FL, United States)
Landsberg, P. T. (Florida Univ. Gainesville, FL, United States)
San, C. T. (Illinois Univ. Urbana, United States)
Date Acquired
September 5, 2013
Publication Date
December 31, 1984
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-175681
DRL-198
JPL-9950-1033
DOE/JPL-956525-85/6
NAS 1.26:175681
Accession Number
85N25940
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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