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Method for growth of crystals by pressure reduction of supercritical or subcritical solutionCrystals of high morphological quality are grown by dissolution of a substance to be grown into the crystal in a suitable solvent under high pressure, and by subsequent slow, time-controlled reduction of the pressure of the resulting solution. During the reduction of the pressure interchange of heat between the solution and the environment is minimized by performing the pressure reduction either under isothermal or adiabatic conditions.
Document ID
19850021488
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Shlichta, P. J. (JPL Pasadena, Calif., United States)
Date Acquired
August 12, 2013
Publication Date
April 23, 1985
Subject Category
Solid-State Physics
Accession Number
85N29800
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,512,846|NASA-CASE-NPO-15772-1
Patent Application
US-PATENT-APPL-SN-392944

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