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Stress and efficiency studies in EFGStress and efficiency studies in EFG were carried out for silicon sheet growth. Methods were developed to quantify influence of dislocation electrical activity on bulk lifetime. A new creep law formulation for silicon stress was developed. Bulk lifetime degradation due to increase in doping levels was also examined.
Document ID
19850024127
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kalejs, J. P. (Mobil Tyco Solar Energy Corp. Waltham, MA, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: JPL Proc. of the 24th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
85N32440
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19850024081Collected WorksProceedings of the 24th Project Integration Meeting
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