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Analysis of inclined growth of silicon sheetA general-purpose finite element program was developed for analysis of silicon sheet growth in inclined configurations. This program will be used to study parametric sensitivity of various growth geometries with respect to thermal control and growth rate, dopant segregation, thermal stress and interface morphology and instability.
Document ID
19850024129
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Brown, R. A. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: JPL Proc. of the 24th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
85N32442
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19850024081Collected WorksProceedings of the 24th Project Integration Meeting
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