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Silicon carbide sintered products and a method for their manufacturingSiC based sinters are produced by pressureless sintering from a SiC-AlN solid solution containing Al2 to 20, N 0.2 to 10, O 0.2 to 5, a Group IIIB element 0 to 15 percent, the remainder being Si and C. Thus, a 90:10 mixture of SiC and AlN powders were cold pressed at 2000 kg/sq cm and sintered for 5 hours at 2100 C in a nitrogen atmosphere. The resulting product had density of 3.11 g/cu cm and bending strength at ambient and 1400 C at 68.5 and 66.3 kg/sq mm.
Document ID
19860012208
Acquisition Source
Legacy CDMS
Document Type
Other - Other
Authors
Suzuki, K. (NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
October 1, 1986
Subject Category
Nonmetallic Materials
Report/Patent Number
NASA-TM-77932
NAS 1.15:77932
Accession Number
86N21679
Funding Number(s)
CONTRACT_GRANT: NASW-4005
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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