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Surface and bulk-loss reduction research by low-energy hydrogen dopingSurface and bulk loss reduction by low energy hydrogen doping of silicon solar cells was examined. Hydrogen ions provided a suppression of space charge recombination currents. Implantation of hydrogen followed by the anneal cycle caused more redistribution of boron than the anneal which could complicate processing. It was demonstrated that passivation leads to space charge current reduction.
Document ID
19860019906
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fonash, S. (Pennsylvania State Univ. University Park, PA, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: JPL, Pasadena, Calif. Proceedings of the 25th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
86N29378
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19860019875Collected WorksProceedings of the 25th Project Integration Meeting
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