NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cellsThe use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.
Document ID
19870006992
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fonash, S. J. (Pennsylvania State Univ. University Park, PA, United States)
Sigh, R. (Pennsylvania State Univ. University Park, PA, United States)
Mu, H. C. (Pennsylvania State Univ. University Park, PA, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1986
Publication Information
Publication: JPL, California Inst. of Tech., Pasadena Proceedings of the 26th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
87N16425
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available