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High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cellsA multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.
Document ID
19870007966
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Daud, Taher (Jet Propulsion Lab. California Inst. of Tech., Pasadena, United States)
Kachare, Akaram H. (NASA Pasadena Office CA, United States)
Date Acquired
August 13, 2013
Publication Date
December 23, 1986
Subject Category
Energy Production And Conversion
Accession Number
87N17399
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-16526-1CU|US-PATENT-4,631,352
Patent Application
US-PATENT-APPL-SN-809975

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