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Total immersion crystal growthCrystals of wide band gap materials are produced by positioning a holder receiving a seed crystal at the interface between a body of molten wide band gap material and an overlying layer of temperature-controlled, encapsulating liquid. The temperature of the layer decreases from the crystallization temperature of the crystal at the interface with the melt to a substantially lower temperature at which formation of crystal defects does not occur, suitably a temperature of 200 to 600 C. After initiation of crystal growth, the leading edge of the crystal is pulled through the layer until the leading edge of the crystal enters the ambient gas headspace which may also be temperature controlled. The length of the column of liquid encapsulant may exceed the length of the crystal such that the leading edge and trailing edge of the crystal are both simultaneously with the column of the crystal. The crystal can be pulled vertically by means of a pulling-rotation assembly or horizontally by means of a low-angle withdrawal mechanism.
Document ID
19870013853
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Morrison, Andrew D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena., United States)
Date Acquired
August 13, 2013
Publication Date
March 31, 1987
Subject Category
Solid-State Physics
Accession Number
87N23286
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-15800-2|US-PATENT-4,654,110
Patent Application
US-PATENT-APPL-SN-674395|US-PATENT-APPL-SN-442815

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