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Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cellsSeveral silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear.
Document ID
19870017002
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Anspaugh, B. E. (NASA Lewis Research Center Cleveland, OH, United States)
Kachare, R. (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
June 1, 1987
Publication Information
Publication: Space Photovoltaic Research and Technology 1986. High Efficiency, Space Environment and Array Technology
Subject Category
Energy Production And Conversion
Accession Number
87N26435
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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