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Comparative performance of diffused junction indium phosphide solar cellsA comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.
Document ID
19870017008
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr. (NASA Lewis Research Center Cleveland, OH, United States)
Ghandhi, S. K. (NASA Lewis Research Center Cleveland, OH, United States)
Borrego, J. M. (NASA Lewis Research Center Cleveland, OH, United States)
Parat, K. K. (Rensselaer Polytechnic Inst. Troy, N.Y., United States)
Date Acquired
September 5, 2013
Publication Date
June 1, 1987
Publication Information
Publication: Space Photovoltaic Research and Technology 1986. High Efficiency, Space Environment and Array Technology
Subject Category
Energy Production And Conversion
Accession Number
87N26441
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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