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High-power AlGaAs channeled substrate planar diode lasers for spaceborne communicationsA high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.
Document ID
19890005055
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Connolly, J. C. (David Sarnoff Research Center Princeton, NJ, United States)
Goldstein, B. (David Sarnoff Research Center Princeton, NJ, United States)
Pultz, G. N. (David Sarnoff Research Center Princeton, NJ, United States)
Slavin, S. E. (David Sarnoff Research Center Princeton, NJ, United States)
Carlin, D. B. (David Sarnoff Research Center Princeton, NJ, United States)
Ettenberg, M. (David Sarnoff Research Center Princeton, NJ, United States)
Date Acquired
September 5, 2013
Publication Date
November 1, 1988
Subject Category
Lasers And Masers
Report/Patent Number
NAS 1.26:4189
NASA-CR-4189
Accession Number
89N14426
Funding Number(s)
CONTRACT_GRANT: NAS1-17441
PROJECT: RTOP 506-44-21-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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