NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Extrinsic germanium Blocked Impurity Bank (BIB) detectorsGe:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.
Document ID
19900012006
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Krabach, Timothy N. (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Huffman, James E. (Rockwell International Science Center Anaheim, CA., United States)
Watson, Dan M. (Rochester Univ. NY., United States)
Date Acquired
September 6, 2013
Publication Date
October 1, 1989
Publication Information
Publication: NASA, Ames Research Center, Proceedings of the Third Infrared Detector Technology Workshop
Subject Category
Instrumentation And Photography
Accession Number
90N21322
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available