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Growth kinetics of physical vapor transport processes: Crystal growth of the optoelectronic material mercurous chloridePhysical vapor transport processes were studied for the purpose of identifying the magnitude of convective effects on the crystal growth process. The effects of convection on crystal quality were were studied by varying the aspect ratio and those thermal conditions which ultimately affect thermal convection during physical vapor transport. An important outcome of the present study was the observation that the convection growth rate increased up to a certain value and then dropped to a constant value for high aspect ratios. This indicated that a very complex transport had occurred which could not be explained by linear stability theory. Better quality crystals grown at a low Rayleigh number confirmed that improved properties are possible in convectionless environments.
Document ID
19910010007
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Singh, N. B. (Westinghouse Research and Development Center Pittsburgh, PA., United States)
Duval, W. M. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
March 1, 1991
Subject Category
Materials Processing
Report/Patent Number
E-6065
NAS 1.15:103788
NASA-TM-103788
Accession Number
91N19320
Funding Number(s)
CONTRACT_GRANT: NAS3-25274
PROJECT: RTOP 674-21-05
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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