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Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cellsExcellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.
Document ID
19910010041
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jain, Raj K. (NASA Lewis Research Center Cleveland, OH, United States)
Flood, Dennis J. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1990
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-6024
NASA-TM-103762
NAS 1.15:103762
Meeting Information
Meeting: International Photovoltaic Science and Engineering Conference
Location: Kyoto
Country: Japan
Start Date: November 26, 1990
End Date: November 30, 1990
Sponsors: Foundation for the Advancement of International Science, Inst. of Electrical Engineers of Japan, Japan Society of Applied Physics
Accession Number
91N19354
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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