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Optimization of transistor design including large signal device/circuit interactions at extremely high frequencies (20-100+GHz)Transistor design for extremely high frequency applications requires consideration of the interaction between the device and the circuit to which it is connected. Traditional analytical transistor models are to approximate at some of these frequencies and may not account for variations of dopants and semiconductor materials (especially some of the newer materials) within the device. Physically based models of device performance are required. These are based on coupled systems of partial differential equations and typically require 20 minutes of Cray computer time for a single AC operating point. A technique is presented to extract parameters from a few partial differential equation solutions for the device to create a nonlinear equivalent circuit model which runs in approximately 1 second of personal computer time. This nonlinear equivalent circuit model accurately replicates the contact current properties of the device as computed by the partial differential solver on which it is based. Using the nonlinear equivalent circuit model of the device, optimization of systems design can be performed based on device/circuit interactions.
Document ID
19920004754
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Levy, Ralph
(Scientific Research Associates, Inc. Glastonbury, CT, United States)
Grubin, H. L.
(Scientific Research Associates, Inc. Glastonbury, CT, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1991
Publication Information
Publication: Pennsylvania State Univ., Third International Conference on Inverse Design Concepts and Optimization in Engineering Sciences (ICIDES-3)
Subject Category
Electronics And Electrical Engineering
Accession Number
92N13972
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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