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Growth of III-V films by control of MBE growth front stoichiometryFor the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.
Document ID
19920012792
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Grunthaner, Frank J. (California Inst. of Tech. Pasadena., United States)
Liu, John K. (California Inst. of Tech. Pasadena., United States)
Hancock, Bruce R. (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Date Acquired
August 15, 2013
Publication Date
March 10, 1992
Subject Category
Solid-State Physics
Accession Number
92N22035
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-17724-1-CU|US-PATENT-5,094,974
Patent Application
US-PATENT-APPL-SN-488578

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