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Quantum well, beam deflecting surface emitting lasersThis invention relates to surface emitting semiconductor lasers (SELs), with integrated 45 deg. beam deflectors. A SEL is formed on a wafer including vertical mirrors and 45 deg. beam deflectors formed in grooves by tilted ion beam etching. A SEL is a lattice matched, or unstrained, AlGaAs/GaAs GRINSCH SQW SEL. An alternate embodiment is shown, in which a SEL is lattice mismatched, strained or pseudomorphic, or InGaAs/AlGaAs GRINSCH SQW SEL which emits radiation at a wavelength to which its substrate is transparent. Both SELs exhibit high output power, low threshold current density, and relatively high efficiency, and each are processing compatible with conventional large scale integration technology. Such SELs may be fabricated in large numbers from single wafers. The novel features of this invention include the use of tilted ion beam etching to form a pair of grooves each including vertical mirrors and 45 deg. beam deflectors. The embodiment provides substantial circuit design flexibility because radiation may be coupled both up and/or down through the substrate.
Document ID
19930004230
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Kim, Jae H.
(Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Date Acquired
August 16, 2013
Publication Date
October 27, 1992
Subject Category
Lasers And Masers
Accession Number
93N13418
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,159,603|NASA-CASE-NPO-18243-1-CU
Patent Application
US-PATENT-APPL-SN-710424
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