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Very high temperature silicon on silicon pressure transducersA silicon on silicon pressure sensor has been developed for use at very high temperatures (1000 F). The design principles used to fabricate the pressure sensor are outlined and results are presented of its high temperature performance.
Document ID
19930004491
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kurtz, Anthony D. (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Nunn, Timothy A. (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Briggs, Stephen A. (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Ned, Alexander (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Date Acquired
September 6, 2013
Publication Date
September 1, 1992
Publication Information
Publication: NASA. Langley Research Center, The 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments
Subject Category
Instrumentation And Photography
Accession Number
93N13679
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19930004473Collected WorksThe 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments
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