NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Planar GaAs diodes for THz frequency mixing applicationsSchottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.
Document ID
19930018587
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bishop, William L. (Virginia Univ. Charlottesville, VA, United States)
Crowe, Thomas W. (Virginia Univ. Charlottesville, VA, United States)
Mattauch, Robert J. (Virginia Univ. Charlottesville, VA, United States)
Dossal, Hasan (Virginia Univ. Charlottesville, VA, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1992
Publication Information
Publication: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings
Subject Category
Electronics And Electrical Engineering
Accession Number
93N27776
Funding Number(s)
CONTRACT_GRANT: NSF ECS-87-20850
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

IDRelationTitle19930018537Collected WorksThe Third International Symposium on Space Terahertz Technology: Symposium proceedings
No Preview Available