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New approach to the design of Schottky barrier diodes for THz mixersNear-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.
Document ID
19930018589
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jelenski, A. (Polish Academy of Sciences Warsaw., United States)
Grueb, A. (Technische Hochschule Darmstadt, Germany)
Krozer, V. (Technische Hochschule Darmstadt, Germany)
Hartnagel, H. L. (Technische Hochschule Darmstadt, Germany)
Date Acquired
September 6, 2013
Publication Date
January 1, 1992
Publication Information
Publication: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings
Subject Category
Electronics And Electrical Engineering
Accession Number
93N27778
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19930018537Collected WorksThe Third International Symposium on Space Terahertz Technology: Symposium proceedings
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