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High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctionsDeep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.
Document ID
19940006910
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Messenger, S. R.
(SFA, Inc. Landover, MD, United States)
Walters, R. J.
(Naval Research Lab. Washington, DC., United States)
Summers, G. P.
(Maryland Univ. Baltimore County, Catonsville., United States)
Date Acquired
September 6, 2013
Publication Date
May 1, 1993
Publication Information
Publication: NASA. Lewis Research Center, Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12)
Subject Category
Spacecraft Propulsion And Power
Accession Number
94N11382
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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