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Single event effects and laser simulation studiesThe single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.
Document ID
19940009339
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Kim, Q. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Schwartz, H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Mccarty, K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Coss, J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Barnes, C. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 6, 2013
Publication Date
August 15, 1993
Subject Category
Lasers And Masers
Report/Patent Number
NASA-CR-194506
NAS 1.26:194506
JPL-PUBL-93-23
Accession Number
94N13812
Funding Number(s)
CONTRACT_GRANT: NAS7-918
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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