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Vaporization of a mixed precursors in chemical vapor deposition for YBCO filmsSingle phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.
Document ID
19960003155
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Zhou, Gang (Wisconsin Univ. Milwaukee, WI, United States)
Meng, Guangyao (Wisconsin Univ. Milwaukee, WI, United States)
Schneider, Roger L. (Wisconsin Univ. Milwaukee, WI, United States)
Sarma, Bimal K. (Wisconsin Univ. Milwaukee, WI, United States)
Levy, Moises (Wisconsin Univ. Milwaukee, WI, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1995
Subject Category
Solid-State Physics
Report/Patent Number
NIPS-95-05523
NASA-CR-199535
NAS 1.26:199535
Accession Number
96N13164
Funding Number(s)
CONTRACT_GRANT: NAG3-1274
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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