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SiC-Based Schottky Diode Gas SensorsSilicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.
Document ID
19970041420
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Hunter, Gary W.
(NASA Lewis Research Center Cleveland, OH United States)
Neudeck, Philip G.
(NASA Lewis Research Center Cleveland, OH United States)
Chen, Liang-Yu
(NASA Lewis Research Center Cleveland, OH United States)
Knight, Dak
(Cortez 3 Service Corp. Cleveland, OH United States)
Liu, Chung-Chiun
(Case Western Reserve Univ. Cleveland, OH United States)
Wu, Quing-Hai
(Case Western Reserve Univ. Cleveland, OH United States)
Date Acquired
September 6, 2013
Publication Date
October 1, 1997
Subject Category
Instrumentation And Photography
Report/Patent Number
E-10910
NASA-TM-113159
NAS 1.15:113159
Accession Number
97N32500
Funding Number(s)
PROJECT: RTOP 523-26-13-00
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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