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ZnSe Window Layers for GaAs and GaInP2 Solar CellsThis report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.
Document ID
19980237691
Acquisition Source
Legacy CDMS
Document Type
Contractor or Grantee Report
Authors
Olsen, Larry C. (Washington State Univ. Tri-Cities, WA United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1995
Subject Category
Energy Production And Conversion
Funding Number(s)
CONTRACT_GRANT: NAG3-1742
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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