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Heat Treatments of ZnSe Starting Materials for Physical Vapor TransportThe effect of different heat treatments on stoichiometry and residual gas pressure in ZnSe physical vapor transport system was investigated. The dependence of the amount and composition of the residual gas on various heat treatment procedures is reported. Heat treatment of ZnSe starting materials by baking under the condition of dynamic vacuum to adjust its stoichiometry was performed and the effectiveness of the treatment was confirmed by the measurements of the partial pressure of Se2, P(sub Se2), in equilibrium with the heat treated samples. Optimum heat treatment procedures on the ZnSe starting material for the physical vapor transport process are discussed and verified experimentally.
Document ID
19990071203
Acquisition Source
Marshall Space Flight Center
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/S0022-0248(98)00365-0
Authors
Su, Ching-Hua (NASA Marshall Space Flight Center Huntsville, AL United States)
Palosz, W. (NASA Marshall Space Flight Center Huntsville, AL United States)
Feth, S. (NASA Marshall Space Flight Center Huntsville, AL United States)
Lehoczky, S. L. (NASA Marshall Space Flight Center Huntsville, AL United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1998
Publication Information
Publication: Journal of Crystal Growth
Publisher: Elsevier Science B.V.
Volume: 192
Subject Category
Inorganic And Physical Chemistry
Distribution Limits
Public
Copyright
Public Use Permitted.

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