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Characterizing Surfaces of the Wide Bandgap Semiconductor Ilmenite with Scanning Probe MicrocopiesIlmenite (FeTiO3) is a wide bandgap semiconductor with an energy gap of about 2.5eV. Initial radiation studies indicate that ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Two scanning probe microscopy methods have been used to characterize the surface of samples taken from Czochralski grown single crystals. The two methods, atomic force microscopy (AFM) and scanning tunneling microscopy (STM), are based on different physical principles and therefore provide different information about the samples. AFM provides a direct, three-dimensional image of the surface of the samples, while STM give a convolution of topographic and electronic properties of the surface. We will discuss the differences between the methods and present preliminary data of each method for ilmenite samples.
Document ID
20010000494
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Wilkins, R. (Prairie View Agricultural and Mechanical Coll. TX United States)
Powell, Kirk St. A. (Prairie View Agricultural and Mechanical Coll. TX United States)
Date Acquired
August 20, 2013
Publication Date
February 1, 1997
Publication Information
Publication: NASA University Research Centers Technical Advances in Education, Aeronautics, Space, Autonomy, Earth and Environment
Volume: 1
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
URC97136
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle20010000359Collected WorksNASA University Research Centers Technical Advances in Education, Aeronautics, Space, Autonomy, Earth and Environment
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