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High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire SubstratesFor the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.
Document ID
20030112244
Acquisition Source
Headquarters
Document Type
Preprint (Draft being sent to journal)
Authors
Mueller, Carl H. (Analex Corp.)
Croke, Edward T. (Hughes Research Labs.)
Alterovitz, Samuel A. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
September 7, 2013
Publication Date
February 10, 2003
Subject Category
Solid-State Physics
Funding Number(s)
WBS: WBS 274-00-01-05
Distribution Limits
Public
Copyright
Public Use Permitted.

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