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Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to NanoAll present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.
Document ID
20060018359
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
MacLeod, Todd, C. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Ho, Fat Duen (Alabama Univ. Huntsville, AL, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2006
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Public Use Permitted.

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