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Fabricating porous silicon carbideThe formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.
Document ID
20080004797
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Shor, Joseph S.
Kurtz, Anthony D.
Date Acquired
August 24, 2013
Publication Date
December 27, 1994
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: NAS3-26599
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,376,241
Patent Application
US-PATENT-APPL-SN-159375
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