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Methods for forming group III-arsenide-nitride semiconductor materialsMethods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Document ID
20080005028
Acquisition Source
Goddard Space Flight Center
Document Type
Other - Patent
Authors
Major, Jo S.
Welch, David F.
Scifres, Donald R.
Date Acquired
August 24, 2013
Publication Date
January 29, 2002
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAS5-32442
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,342,405
Patent Application
US-PATENT-APPL-SN-576746

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