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Strained quantum well photovoltaic energy converterAn indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.
Document ID
20080006938
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Freundlich, Alexandre
Renaud, Philippe
Vilela, Mauro Francisco
Bensaoula, Abdelhak
Date Acquired
August 24, 2013
Publication Date
December 22, 1998
Subject Category
Energy Production And Conversion
Funding Number(s)
CONTRACT_GRANT: NASW-4093
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,851,310
Patent Application
US-PATENT-APPL-SN-568129
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