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Porous silicon carbide (SIC) semiconductor devicePorous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.
Document ID
20080006974
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Shor, Joseph S.
Kurtz, Anthony D.
Date Acquired
August 24, 2013
Publication Date
October 29, 1996
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAS3-26599
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,569,932
Patent Application
US-PATENT-APPL-SN-376854

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