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One-third selection scheme for addressing a ferroelectric matrix arrangementAn improved scheme for selectively addressing a matrix arrangement comprised of ferroelectrics having x and y orthogonally disposed intersecting lines. A one-third selection scheme is utilized that includes normalized selection signals having amplitudes: V.sub.x =0; V.sub.x =2/3; V.sub.y =1/3; and V.sub.y =1, which signals can be applied to the intersection of an x and y-line. The instant selection scheme minimizes both hysteresis creep and the cross-coupling voltage between x and y-lines to prevent undesirable hysteresis switching of the ferroelectric matrix arrangement.
Document ID
20080012266
Acquisition Source
Langley Research Center
Document Type
Other - Patent
Authors
Tannas, Jr., Lawrence E.
Date Acquired
August 24, 2013
Publication Date
September 25, 1979
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: NAS1-12228
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,169,258
Patent Application
US-PATENT-APPL-SN-905914

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