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Solid-state non-volatile electronically programmable reversible variable resistance deviceA solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.
Document ID
20080012331
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Ramesham, Rajeshuni
Thakoor, Sarita
Daud, Taher
Thakoor, Aniklumar P.
Date Acquired
August 24, 2013
Publication Date
June 13, 1989
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,839,700
Patent Application
US-PATENT-APPL-SN-133897

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